Computer Simulation of Surface Diffusion of Silicon and Carbon Adatoms on SiC(001)

Bhatti, Q. A., Moran, G. J. and Matthai, Clarence Cherian 2011. Computer Simulation of Surface Diffusion of Silicon and Carbon Adatoms on SiC(001). Presented at: MRS Spring Meeting 1996, San Francisco, CA, 4 - 12 April 1996. MRS Proceedings. Materials Research Society Conference Proceedings , vol.423 Cambridge University Press, pp. 439-444. 10.1557/PROC-423-439

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Abstract

We have performed molecular dynamics simulations of adatom diffusion on the SiC(001) surface and found that the barriers for carbon adatoms is less than that for silicon adatoms. The diffusion paths were also found to be temperature dependent and at high temperatures the adatom diffusion constant was found to of the order of 10−5 cm2 s−1

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Cambridge University Press
ISSN:	19464274
Last Modified:	04 Jun 2017 06:50
URI:	https://orca.cardiff.ac.uk/id/eprint/65259

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