Reflectance anisotropy and Raman scattering spectroscopy studies of ZnSe grown on GaAs(001)

Spaltmann, D., Morris, S. J., Matthai, Clarence Cherian and Williams, Robert 1995. Reflectance anisotropy and Raman scattering spectroscopy studies of ZnSe grown on GaAs(001). Journal of Physics D: Applied Physics 28 (12) , 2574. 10.1088/0022-3727/28/12/027

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Abstract

Using an evaporation chamber equipped with a ZnSe compound source, we have grown ZnSe on GaAs(001) and characterized the surface using low-energy electron diffraction (LEED), Raman scattering spectroscopy and reflectance anisotropy spectroscopy (RAS). High-quality layers of ZnSe were obtained and revealed by LEED to have a c(2*2) surface reconstruction and the RAS spectra were measured. The RAS spectra proved to be reproducible when a similar surface was obtained by de-capping a Se-capped ZnSe(001) sample

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
ISSN:	0022-3727
Last Modified:	04 Jun 2017 06:50
URI:	https://orca.cardiff.ac.uk/id/eprint/65302

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