Study of the electronic structure and band offsets of the GaSb/InAs system

Oloumi, M. and Matthai, Clarence Cherian 1990. Study of the electronic structure and band offsets of the GaSb/InAs system. Semiconductor Science and Technology 5 (9) , 947. 10.1088/0268-1242/5/9/004

Full text not available from this repository.

Abstract

The authors have performed self-consistent density functional calculations using ab initio pseudopotentials on (InAs)n/(GaSb)n superlattices for n=2, 3, 6. From these, they have determined the band offsets for the three different (001) interface bonding configurations possible. They have also studied the effect of relaxation due to the disparate bonding strengths. Finally they also present results for the (110) interface which show that the valence band offset is orientation dependent

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IOP Science
ISSN:	02681242
Last Modified:	04 Jun 2017 06:52
URI:	https://orca.cardiff.ac.uk/id/eprint/65835

Citation Data

Cited 2 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item