Matthai, Clarence Cherian 1989. Molecular dynamics simulation of transition metals as silicon substrates. Molecular Simulation 3 (1-3) , pp. 101-114. 10.1080/08927028908034621 |
Official URL: http://dx.doi.org/10.1080/08927028908034621
Abstract
In recent years the growth of epitaxial layers and strained layer superlattices have been simulated by using the method of molecular dynamics. We have used this method to study the formation of transition metal silicides as the metal is deposited on a silicon substrate. We propose effective empirical potentials to describe the interaction between the metal and silicon and use the Dodson and Stillinger-Weber potentials to model the silicon-silicon interaction. We report on the evolution of nickel layers on the substrate as a function of temperature.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Uncontrolled Keywords: | Molecular dynamics, nickel-silicon interfaces, silicides |
Additional Information: | Special Issue: Industrial Applications of Molecular Simulation—Part II |
Publisher: | Taylor & Francis |
ISSN: | 0892-7022 |
Last Modified: | 04 Jun 2017 08:20 |
URI: | https://orca.cardiff.ac.uk/id/eprint/76056 |
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