Computer simulation of metal-semiconductor and semiconductor-semiconductor interfaces

Matthai, Clarence Cherian and Ashu, P. 1990. Computer simulation of metal-semiconductor and semiconductor-semiconductor interfaces. Le Journal de Physique Colloques 51 (C1) , C1- 873. 10.1051/jphyscol:19901137

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Abstract

A Si-Ge interatomic potential was used to calculate the energy difference between strained and unstrained Ge layers on Si(001) substrates as a function of the number of layers . From this we estimate the critical thickness for dislocation nucleation to be less than 12 layers . The embedded atom method was used to construct embedding functions and pair interactions for bulk Ni and NiSi2. This approach was then used to calculate the energy of the NiSi2/Si (111) interface from which we find that the interface interplanar separation in the Type B case is less than that for Type A.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	EDP Sciences
ISSN:	0449-1947
Last Modified:	04 Jun 2017 08:20
URI:	https://orca.cardiff.ac.uk/id/eprint/76068

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