A theoretical study of Band Offset modification at the GaAs/AlAs interface employing Si interlayers

Saynor, K. A., Bass, J. M., Matthai, Clarence Cherian, Payne, M.. C and Milman, V. 1994. A theoretical study of Band Offset modification at the GaAs/AlAs interface employing Si interlayers. Presented at: Formation of semiconductor interfaces : 4th International Conference (ICFSI -4), Jülich, Germany, 14-18 June 1993. Published in: Lengeler, B., Luth, H., Moench, W. and Pollman, J. eds. Formation of semiconductor interfaces : proceedings of the 4th International Conference, Forschungszentrum Jülich, 14-18 June 1993. Singapore, River Edge, NJ: World Scientific,

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Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	World Scientific
ISBN:	9789810215590
Last Modified:	04 Jun 2017 08:20
URI:	https://orca.cardiff.ac.uk/id/eprint/76160

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