Epitaxial growth of GaSb and InAs fins on 300 mm Si (001) by aspect ratio trapping

Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789, Vert, Alexey, O'Brian, Brendan, Herman, Joshua L., Vivekanand, Saikumar, Papa Rao, Satyavolu S. and Oktyabrsky, Serge R. 2016. Epitaxial growth of GaSb and InAs fins on 300 mm Si (001) by aspect ratio trapping. Journal of Applied Physics 120 (8) , 085308. 10.1063/1.4961522

Preview

PDF - Accepted Post-Print Version Download (1MB) | Preview

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy
Additional Information:	PDF uploaded in accordance with publisher's polices at http://www.sherpa.ac.uk/romeo/issn/0021-8979/ (accessed 4.11.16).
Publisher:	American Institute of Physics
ISSN:	0021-8979
Date of First Compliant Deposit:	4 November 2016
Date of Acceptance:	10 August 2016
Last Modified:	29 Nov 2024 13:15
URI:	https://orca.cardiff.ac.uk/id/eprint/94344

Citation Data

Cited 28 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item