Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300mm on-axis Si (001) wafers by MOCVD

Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789, Vert, Alexey, Kim, Tae-Woo, Hung, P.Y., Herman, Joshua L., Vivekanand, Saikumar, Huang, Gensheng, Kelman, Max, Karim, Zia, Hill, Richard J.W. and Rao, Satyavolu S. Papa 2015. Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300mm on-axis Si (001) wafers by MOCVD. Journal of Crystal Growth 427 , pp. 72-79. 10.1016/j.jcrysgro.2015.07.013

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Abstract

We report on the development of a metamorphic In0.53Ga0.47As-based heterostructure grown on 300 mm on-axis Si (001) wafers by metal-organic chemical vapor deposition (MOCVD), and the fabrication of a Metal-Oxide-Semiconductor Capacitor (MOSCAP) with C–V characteristics and interfacial trap density (Dit) values comparable to those of an equivalent structure grown on an InP substrate. A 1.15 µm thick GaAs/InP buffer with a defect density in the low 109 cm−2 range and a surface roughness rms value <2 nm was used to accommodate the large lattice mismatch between In0.53Ga0.47As and Si.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Uncontrolled Keywords:	A3. Metalorganic chemical vapor deposition; B2. Semiconducting III–V materials; B2. Semiconducting gallium arsenide; B2. Semiconducting indium phosphide
Publisher:	Elsevier
ISSN:	0022-0248
Date of Acceptance:	9 July 2015
Last Modified:	01 Nov 2022 11:15
URI:	https://orca.cardiff.ac.uk/id/eprint/94346

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