Orzali, Tommaso ![]() |
Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2015.07.013
Abstract
We report on the development of a metamorphic In0.53Ga0.47As-based heterostructure grown on 300 mm on-axis Si (001) wafers by metal-organic chemical vapor deposition (MOCVD), and the fabrication of a Metal-Oxide-Semiconductor Capacitor (MOSCAP) with C–V characteristics and interfacial trap density (Dit) values comparable to those of an equivalent structure grown on an InP substrate. A 1.15 µm thick GaAs/InP buffer with a defect density in the low 109 cm−2 range and a surface roughness rms value <2 nm was used to accommodate the large lattice mismatch between In0.53Ga0.47As and Si.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Uncontrolled Keywords: | A3. Metalorganic chemical vapor deposition; B2. Semiconducting III–V materials; B2. Semiconducting gallium arsenide; B2. Semiconducting indium phosphide |
Publisher: | Elsevier |
ISSN: | 0022-0248 |
Date of Acceptance: | 9 July 2015 |
Last Modified: | 01 Nov 2022 11:15 |
URI: | https://orca.cardiff.ac.uk/id/eprint/94346 |
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