Impact of H2 high-pressure annealing onto InGaAs quantum-well metal–oxide–semiconductor field-effect transistors with Al2O3/HfO2 Gate-Stack

Kim, Tae-Woo, Kwon, Hyuk-Min, Shin, Seung Heon, Shin, Chan-Soo, Park, Won-Kyu, Chiu, Eddie, Rivera, Manny, Lew, Jae Ik, Veksler, Dmitry, Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789 and Kim, Dae-Hyun 2015. Impact of H2 high-pressure annealing onto InGaAs quantum-well metal–oxide–semiconductor field-effect transistors with Al2O3/HfO2 Gate-Stack. IEEE Electron Device Letters 36 (7) , pp. 672-674. 10.1109/LED.2015.2438433

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Abstract

We report on the impact of H2 high-pressure annealing (HPA) onto In0.7Ga0.3As MOSCAPs and quantum-well (QW) MOSFETs with Al2O3/HfO2 gate-stack. After HPA with process condition of 300°C, H2 ambient and pressure of 20 atm, we observed notable improvements of the capacitance-voltage (CV) characteristics in InGaAs MOSCAPs with Al2O3/HfO2 gate-stack, such as reduction of equivalent-oxide-thickness and less frequency dispersion in the accumulation region. There was 20% improvement of the interfacial trap density (Dit). Then, we incorporated the HPA process into the fabrication of sub-100-nm In0.7Ga0.3As QW MOSFETs, to investigate the impact of HPA process. After HPA process, the device with Lg = 50 nm exhibits improved subthreshold-swing (SS) = 105 mV/decade, in comparison with SS = 130 mV/decade for the reference device without HPA process. Finally, we carried out reliability assessment under a constant-voltage-stress (CVS), and it turns out that the HPA process was effective in mitigating a shift of threshold voltage (ΔVT) during the CVS. These are attributed to the effective passivation of oxide traps in the high-k dielectric layer and interfacial traps, after HPA process in the H2 ambient.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Uncontrolled Keywords:	high-pressure annealing, In0.53Ga0.47As MOSFET, atomic layer deposition (ALD), subthreshold-swing (SS), interfacial trap density (Dit)
ISSN:	0741-3106
Date of Acceptance:	22 May 2015
Last Modified:	01 Nov 2022 11:15
URI:	https://orca.cardiff.ac.uk/id/eprint/94348

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