300mm wafer level sulfur monolayer doping for III–V materials

Loh, W.-Y., Lee, R. T.P., Tieckelmann, R., Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789, Sapp, B., Hobbs, C., Rao, S.S. Papa, Fuse, K., Sato, M., Fujiwara, N., Chang, L. and Uchida, H. 2015. 300mm wafer level sulfur monolayer doping for III–V materials. Presented at: Advanced Semiconductor Manufacturing Conference (ASMC), Saratoga Springs NY, 3-6 May 2015. Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI. New York: Institute of Electrical and Electronics Engineers (IEEE), pp. 451-454. 10.1109/ASMC.2015.7164438

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Abstract

We have demonstrated sulfur monolayer doping (MLD) of In(53%)GaAs on III-V buffer/Si substrate at 300mm wafer scale and obtained sheet resistance of 303 ohms/sq with 8% uniformity. Mono-layer doping was achieved via molecular doping of sulfur and conventional annealing for dopant drive-in. Chemical reactivity, cost, environmental, safety and health aspects (all of which are crucial for high volume manufacturing) were considered in the chemical down-selection. MLD demonstrates molecular-scale control with conformal, nondestructive introduction of dopants to III-V materials.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Schools > Physics and Astronomy
Uncontrolled Keywords:	Nanoscale, Monolayer Doping, Shallow Junctions
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
ISBN:	9781479999309
Last Modified:	01 Nov 2022 11:15
URI:	https://orca.cardiff.ac.uk/id/eprint/94349

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