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Number of items: 7.

S

Sobiesierski, Zbigniew, Dharmadasa, I. M. and Williams, R. H. 1990. Photoluminescence as a probe of semiconductor surfaces: CdTe and CdS. Journal of Crystal Growth 101 (1-4) , pp. 599-602. 10.1016/0022-0248(90)91044-Q

Sobiesierski, Zbigniew, Forsyth, N. M., Dharmadasa, I. M. and Williams, R. H. 1990. Use of x-ray photoelectron spectroscopy to investigate the deposition of metaloverlayers onto the clean cleaved CdS surface. Surface Science 231 (1-2) , pp. 98-102. 10.1016/0039-6028(90)90697-7

Sobiesierski, Zbigniew, Westwood, David I. and Williams, R. H. 1990. Raman scattering from InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy. Materials Science and Engineering: B 5 (2) , pp. 265-268. 10.1016/0921-5107(90)90066-K

Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1990. Characterization of GaAs buffer layers 0.1 μm thick grown on Si(100). Materials Science and Engineering: B 5 (2) , pp. 275-278. 10.1016/0921-5107(90)90068-M

Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1990. Photoluminescence measurements for GaAS grown on SI(100) and SI(111) by molecular-beam epitaxy. Presented at: 20th International Conference on the Physics of Semiconductors, Thessaloniki, Greece, 6-10 August 1990. Published in: Joannopoulos, John D. and Anastassakis, E. eds. 20th International Conference on the Physics of Semiconductors (ICPS), Thessaloniki, Greece, Aug. 6-10 1990. London: World Scientific Publishing, pp. 1081-1084.

Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1990. Variation of strain in single and multilayer (InxGa1−xAs) structures grown on Si(100), and Si(111), by molecular beam epitaxy. Superlattices and Microstructures 7 (4) , pp. 419-421. 10.1016/0749-6036(90)90237-2

W

Wolverson, D., Sobiesierski, Zbigniew and Phillips, R. T. 1990. The dependence of CW photoluminescence on excitation energy in a-P. Journal of Physics: Condensed Matter 2 (30) , pp. 6433-6437. 10.1088/0953-8984/2/30/008

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