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S

Sobiesierski, Zbigniew, Clark, S. A., Williams, R. H., Tabata, A., Benyattou, T., Guillot, G., Gendry, M., Hollinger, G. and Viktorovitch, P. 1991. Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy. Applied Physics Letters 58 (17) , pp. 1863-1865. 10.1063/1.105055
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Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1991. Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy. Applied Physics Letters 58 (6) , pp. 628-630. 10.1063/1.104550
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T

Tabata, A., Benyattou, T., Guillot, G., Sobiesierski, Zbigniew, Clark, S. A., Williams, R. H., Gendry, M., Hollinger, G. and Viktorovitch, P. 1991. Surface InAs/InP quantum wells: epitaxial growth and characterization. Presented at: 3rd International Conference on Indium Phosphide and Related Materials, Cardiff, UK, 8-11 April 1991. Indium Phosphide and Related Materials, 3rd International Conference, Cardiff, UK, 8-11 Apr 1991. New York: IEEE, pp. 496-499. 10.1109/ICIPRM.1991.147421

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