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Online Research @ Cardiff

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Number of items: 3.

S

Sobiesierski, Zbigniew, Clark, S. A., Williams, R. H., Tabata, A., Benyattou, T., Guillot, G., Gendry, M., Hollinger, G. and Viktorovitch, P. 1991. Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy. Applied Physics Letters 58 (17) , pp. 1863-1865. 10.1063/1.105055

Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1991. Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy. Applied Physics Letters 58 (6) , pp. 628-630. 10.1063/1.104550

T

Tabata, A., Benyattou, T., Guillot, G., Sobiesierski, Zbigniew, Clark, S. A., Williams, R. H., Gendry, M., Hollinger, G. and Viktorovitch, P. 1991. Surface InAs/InP quantum wells: epitaxial growth and characterization. Presented at: 3rd International Conference on Indium Phosphide and Related Materials, Cardiff, UK, 8-11 April 1991. Indium Phosphide and Related Materials, 3rd International Conference, Cardiff, UK, 8-11 Apr 1991. INDIUM PHOSPHIDE AND RELATED MATERIALS : THIRD INTERNATIONAL CONFERENCE, VOLS 1 AND 2. New York: IEEE, pp. 496-499. 10.1109/ICIPRM.1991.147421

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