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Number of items: 8.

C

Capizzi, M., Coluzza, C., Emiliani, V., Frankl, P., Frova, A., Sarto, F., Bonapasta, A. A., Sobiesierski, Zbigniew and Sacks, R. N. 1992. Hydrogen activated radiative states in GaAs/GaAlAs heterostructures and InGaAs/GaAs multiquantum wells. Journal of Applied Physics 72 (4) , pp. 1454-1459. 10.1063/1.351707
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S

Sobiesierski, Zbigniew, Clark, S. A. and Williams, R. H. 1992. Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy. Applied Surface Science 56-58 (2) , pp. 703-707. 10.1016/0169-4332(92)90325-R

Sobiesierski, Zbigniew and Westwood, David I. 1992. Coupling between near-surface Inx Ga1−x As / GaAs(100) quantum wells and the sample surface. Superlattices and Microstructures 12 (2) , pp. 267-271. 10.1016/0749-6036(92)90350-E

Sobiesierski, Zbigniew, Woolf, D. A., Frova, A. and Phillips, R. T. 1992. Photoluminescence and photoluminescence excitation spectroscopy of H‐related defects in strained InxGa1−xAs/GaAs(100) quantum wells. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 10 (4) , pp. 1975-1979. 10.1116/1.586169

Sobiesierski, Zbigniew, Woolf, D. A. and Westwood, David I. 1992. Incorporation of H into Inx Ga1−x As / GaAs quantum wells: Optical spectroscopy of H-related radiative states. Superlattices and Microstructures 12 (2) , pp. 261-265. 10.1016/0749-6036(92)90349-A

Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I., Frova, A. and Coluzza, C. 1992. Creation of radiative hydrogen-related states within strained InxGa1-xAs/GaAs quantum wells by hydrogenation. Solid State Communications 81 (1) , pp. 125-128. 10.1016/0038-1098(92)90585-W

W

Williams, P., Westwood, David I., Sobiesierski, Zbigniew and Aubrey, E. 1992. The molecular beam epitaxial growth of GAAS/GAAS(201): doping and growth temperature studies. Presented at: 21st International Conference on the Physics of Semiconductors, Beijing, China, 10-14 August 1992. Published in: Jiang, P. and Zheng, H.-Z. eds. Proceedings of the 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992. Singapore: World Scientific Publishing,

Woolf, D. A., Sobiesierski, Zbigniew, Westwood, David I. and Williams, R. H. 1992. The molecular beam epitaxial growth of GaAs/GaAs(111)B: doping and growth temperature studies. Journal of Applied Physics 71 (10) , pp. 4908-4915. 10.1063/1.350638
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