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Number of items: 4.

Q

Quagliano, L. G. and Sobiesierski, Zbigniew 1993. Raman scattering as a probe of the tensile strain distribution in GaAs grown on Si(111) by molecular beam epitaxy. Superlattices and Microstructures 13 (1) , pp. 105-108. 10.1006/spmi.1993.1021

S

Sobiesierski, Zbigniew and Clegg, J. B. 1993. Evidence for hydrogen accumulation at strained layer heterojunctions. Applied Physics Letters 63 (7) , pp. 926-928. 10.1063/1.110775
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Sobiesierski, Zbigniew, Westwood, David I., Woolf, D. A., Fukui, T. and Hasegawa, H. 1993. Photoluminescence spectroscopy of near‐surface quantum wells: Electronic coupling between quantized energy levels and the sample surface. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 11 (4) , pp. 1723-1726. 10.1116/1.586469

W

Woolf, D. A., Williams, J. P., Westwood, David I., Sobiesierski, Zbigniew, Aubrey, J. E. and Williams, R. H. 1993. The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies. Journal of Crystal Growth 127 (1-4) , pp. 913-917. 10.1016/0022-0248(93)90759-P

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