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Number of items: 3.

L

Lees, A. K., Zhang, J., Sobiesierski, Zbigniew, Taylor, A. G., Xie, M. H., Joyce, B. and Westwood, David I. 1996. New hydrogen desorption kinetics from vicinal Si(001) surfaces as observed by reflectance anisotropy. Presented at: 23rd International Conference on the Physics of Semiconductors, Berlin, Germany, 21-26 July 1996. Published in: Scheffler, M. and Zimmermann, R. eds. The Physics of Semiconductors: Proceedings of the 23rd International Conference on the Physics of Semiconductors, ICPS, Berlin, 21-26 July 1996. Singapore: World Scientific Publishing, pp. 955-958.

S

Sobiesierski, Zbigniew, Westwood, David I. and Woolf, D.A. 1996. Reflectance anisotropy spectroscopy study of GaAs overlayer growth on submonolayer coverages of Si on the GaAs(001)-c(4x4) surface. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 14 (4) , pp. 3065-3069. 10.1116/1.589065

Steimetz, E., Zettler, J. T., Richter, W., Westwood, David I., Woolf, D. A. and Sobiesierski, Zbigniew 1996. Optical monitoring of the development of InAs quantum dots on GaAs(001) by reflectance anisotropy spectroscopy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 14 (4) , pp. 3058-3064. 10.1116/1.589064

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