Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

Zaidi, Z. H., Lee, K. B., Roberts, J. W., Guiney, I., Qian, H., Jiang, S., Cheong, J. S., Li, P., Wallis, D. J. ORCID: https://orcid.org/0000-0002-0475-7583, Humphreys, C. J., Chalker, P. R. and Houston, P. A. 2018. Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics 123 (18) , 184503. 10.1063/1.5027822

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Abstract

In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices with no surface treatment and with two different plasma treatments before the in-situ Al2O3 deposition. The observed changes between samples were quasi-equilibrium VTH, forward bias related VTH hysteresis, and electrical response to reverse bias stress. To explain these effects, a disorder induced gap state model, combined with a discrete level donor, at the dielectric/semiconductor interface was employed. Technology Computer-Aided Design modeling demonstrated the possible differences in the interface state distributions that could give a consistent explanation for the observations.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Engineering
Publisher:	AIP Publishing
ISSN:	0021-8979
Date of First Compliant Deposit:	16 May 2018
Date of Acceptance:	14 May 2018
Last Modified:	27 Nov 2024 22:45
URI:	https://orca.cardiff.ac.uk/id/eprint/111500

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