Raman scattering from InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy

Sobiesierski, Zbigniew, Westwood, David I. and Williams, R. H. 1990. Raman scattering from InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy. Materials Science and Engineering: B 5 (2) , pp. 265-268. 10.1016/0921-5107(90)90066-K

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Abstract

We have performed room temperature Raman scattering measurements, in a backscattering configuration X(YZ), for InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy. The position of the “GaAs-like” longitudinal optical (LO) phonon mode is seen to move toward lower wavenumber in a continuous manner with increasing indium concentration. By calibrating the peak position of this LO phonon against the indium mole fraction, as determined from double crystal X-ray diffraction measurements, we emphasize the use of Raman scattering to measure InxGa1−xAs composition. In addition, we have carried out a study of InAs and In0.56Ga0.44As, grown on GaAs(001), as a function of growth temperature. The InAs LO phonon peak becomes asymmetrical, towards lower wavenumber, with decreasing growth temperature. A second feature, indicative of increasing disorder in the InAs epilayer, becomes evident in the Raman spectra for growth temperatures below 330 °C. Little change is observed in the Raman spectra for In0.56Ga044As over a large range of growth temperatures.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Lifelong Learning Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0921-5107
Last Modified:	04 Jun 2017 02:35
URI:	https://orca.cardiff.ac.uk/id/eprint/11198

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