Photoluminescence measurements for GaAS grown on SI(100) and SI(111) by molecular-beam epitaxy

Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1990. Photoluminescence measurements for GaAS grown on SI(100) and SI(111) by molecular-beam epitaxy. Presented at: 20th International Conference on the Physics of Semiconductors, Thessaloniki, Greece, 6-10 August 1990. Published in: Joannopoulos, John D. and Anastassakis, E. eds. 20th International Conference on the Physics of Semiconductors (ICPS), Thessaloniki, Greece, Aug. 6-10 1990. 20TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, VOLS 1-3. London: World Scientific Publishing, pp. 1081-1084.

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Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Lifelong Learning Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	World Scientific Publishing
ISBN:	9789810205393
Last Modified:	04 Jun 2017 02:36
URI:	https://orca.cardiff.ac.uk/id/eprint/11205

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