Creation of radiative hydrogen-related states within strained InxGa1-xAs/GaAs quantum wells by hydrogenation

Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I., Frova, A. and Coluzza, C. 1992. Creation of radiative hydrogen-related states within strained InxGa1-xAs/GaAs quantum wells by hydrogenation. Solid State Communications 81 (1) , pp. 125-128. 10.1016/0038-1098(92)90585-W

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Abstract

The effects of post-growth hydrogenation on strained In0.09Ga0.91As/GaAs quantum well samples, grown on both GaAs(100) and GaAs/Si(100), have been studied using low temperature photoluminescence (PL) measurements. The incorporation of hydrogen into both shallow and deep radiative states located within individual InxGa1-xAs layers. Furthermore, the use of a structure containing InxGa1-xAs layers of varying well width has allowed us to crudely monitor the H-profile away from the sample surface.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Lifelong Learning Physics and Astronomy
Subjects:	Q Science > QC Physics Q Science > QD Chemistry
Publisher:	Elsevier
ISSN:	0038-1098
Last Modified:	04 Jun 2017 02:36
URI:	https://orca.cardiff.ac.uk/id/eprint/11206

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