The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies

Woolf, D. A., Williams, J. P., Westwood, David I., Sobiesierski, Zbigniew, Aubrey, J. E. and Williams, R. H. 1993. The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies. Journal of Crystal Growth 127 (1-4) , pp. 913-917. 10.1016/0022-0248(93)90759-P

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Abstract

Si-doping and variable growth temperature studies have been performed in the on-axis homoepitaxial GaAs(111)A, (111)B and (201) materials systems. These studies are compared with the already extensively characterized GaAs(100) orientation. It was demonstrated that the Si-doped n-type GaAs(111)B and (201) could be grown across the mid-1014 to 1018 cm-3 range, whereas the Si-doped GaAs(111)A was p-type and could be doped from ≌ 2×1015 to ≌ 5×1017 cm-3. The growth temperature studies revealed similar conducting/non-conducting transitions in the GaAs(111)A, (111)B and (201) specimens as observed for GaAs(100).

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Lifelong Learning Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0022-0248
Last Modified:	04 Jun 2017 02:37
URI:	https://orca.cardiff.ac.uk/id/eprint/11215

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