Photoluminescence spectroscopy of near‐surface quantum wells: Electronic coupling between quantized energy levels and the sample surface

Sobiesierski, Zbigniew, Westwood, David I., Woolf, D. A., Fukui, T. and Hasegawa, H. 1993. Photoluminescence spectroscopy of near‐surface quantum wells: Electronic coupling between quantized energy levels and the sample surface. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 11 (4) , pp. 1723-1726. 10.1116/1.586469

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Abstract

Photoluminescence (PL) measurements have been used to examine the influence which the proximity of the sample surface bears on the radiative recombination occurring within a near‐surface quantum well (QW). The InxGa1−xAs/GaAs system exhibits dramatic attenuation in PL intensity for surface barriers below 75 Å in thickness, without any significant shift in PL peak energy. However, as the GaAs surface barrier is reduced to zero, both In0.26Ga0.74As/GaAs and In0.1Ga0.9As/GaAs QWs reveal the development of an additional PL feature at an energy which coincides with that expected for direct band‐to‐band recombination within the strained InxGa1−xAs layer. PL measurements for chemically etched Al0.3Ga0.7As/GaAs near‐surface QWs also show a lack of shift in PL peak energy, as the outer layer is thinned gradually.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Lifelong Learning Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	JVSTB
ISSN:	1071-1023
Last Modified:	04 Jun 2017 02:37
URI:	https://orca.cardiff.ac.uk/id/eprint/11217

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