On the development of InAs on GaAs(001) as measured by reflectance anisotropy spectroscopy: continuous and islanded films

Westwood, David I., Sobiesierski, Zbigniew, Steimetz, E., Zettler, T. and Richter, W. 1998. On the development of InAs on GaAs(001) as measured by reflectance anisotropy spectroscopy: continuous and islanded films. Applied Surface Science 123-24 , pp. 347-351. 10.1016/S0169-4332(97)00525-4

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Abstract

Reflectance anisotropy spectroscopy (RAS) has been used to monitor the formation and development of InAs islands grown onto GaAs(001) substrates. It is shown by time resolved measurements that entirely different responses are measured at different photon energies and that these correspond to different aspects of the islanding process. At a photon energy of 2.6 eV RAS is very sensitive to the onset of islanding, whereas the 4.0 eV signal appears to be sensitive to the continuous inter-island film. Using the 4.0 eV signal it was possible to follow the real time development of the islanded surface and to identify that at low growth temperatures, beyond the thickness for islanding, only a small fraction of the incident fluxes are incorporated immediately into the islands.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Lifelong Learning Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Quantum dots; Semiconductor; RAS; Epitaxy; Islands
Publisher:	Elsevier
ISSN:	0169-4332
Last Modified:	04 Jun 2017 02:38
URI:	https://orca.cardiff.ac.uk/id/eprint/11225

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