The molecular beam epitaxial growth of GAAS/GAAS(201): doping and growth temperature studies

Williams, P., Westwood, David I., Sobiesierski, Zbigniew and Aubrey, E. 1992. The molecular beam epitaxial growth of GAAS/GAAS(201): doping and growth temperature studies. Presented at: 21st International Conference on the Physics of Semiconductors, Beijing, China, 10-14 August 1992. Published in: Jiang, P. and Zheng, H.-Z. eds. Proceedings of the 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992. Singapore: World Scientific Publishing,

Full text not available from this repository.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Lifelong Learning Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	World Scientific Publishing
ISBN:	9789810219758
Last Modified:	04 Jun 2017 02:38
URI:	https://orca.cardiff.ac.uk/id/eprint/11247

Actions (repository staff only)

Edit Item