Ballistic electron emission microscopy of Au-InAs-GaAs system

Ke, Mao-long, Westwood, David, Matthai, Clarence Cherian, Richardson, Bernard E. ORCID: https://orcid.org/0000-0002-9510-0455 and Williams, R. H. 1996. Ballistic electron emission microscopy of Au-InAs-GaAs system. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14 (4) , pp. 2786-2789. 10.1116/1.588833

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Abstract

We report an investigation of barrier formation and electron transport across InAs and GaAs interfaces by ballisticelectron emissionmicroscopy. The barrier height was found to decrease with the InAs thickness and the detailed variation correlates with the relaxation of the InAs layer. When the thickness is below one monolayer, three thresholds are observed and they are attributed to electron transmission into the Γ, L, and X valleys of the GaAs, respectively. As the thickness increases to three monolayers or beyond, only two thresholds are observed and the reasons are explained in the context of the band structure of the system

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Institute of Physics
ISSN:	0734-211X
Last Modified:	27 Oct 2022 09:14
URI:	https://orca.cardiff.ac.uk/id/eprint/64929

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