Finch, P., Blood, Peter, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842, Sobiesierski, Angela, Gwilliam, R. M. and O'Driscoll, Ian
2013.
Femtosecond pulse generation in passively mode locked InAs quantum dot lasers.
Applied Physics Letters
103
(13)
, 131109.
10.1063/1.4822433
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|
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O'Driscoll, Ian, Blood, Peter, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842, Sobiesierski, Angela and Gwilliam, R.
2012.
Effect of proton bombardment on InAs dots and wetting layer in laser structures.
Applied Physics Letters
100
(26)
, 261105.
10.1063/1.4730964
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|
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Hutchings, Matthew, O'Driscoll, Ian, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Blood, Peter
2011.
Temperature dependence of the gain peak in p-doped InAs quantum dot lasers.
Applied Physics Letters
99
(15)
, pp. 151118-151121.
10.1063/1.3652702
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O'Driscoll, Ian, Hutchings, Matthew, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Blood, Peter
2010.
Many-body effects in InAs/GaAs quantum dot laser structures.
Applied Physics Letters
97
(14)
, 141102.
10.1063/1.3496011
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|
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O'Driscoll, Ian, Blood, Peter and Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842
2010.
Random population of quantum dots in InAs–GaAs laser structures.
IEEE Journal of Quantum Electronics
46
(4)
, pp. 525-532.
10.1109/JQE.2009.2039198
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|
O'Driscoll, Ian, Hutchings, Matthew, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Blood, Peter
2010.
Random population of InAs-GaAs quantum dots.
Presented at: Novel in-plane semiconductor lasers IX,
San Francisco, CA, USA,
25-28 January 2010.
Published in: Belyanin, A. A. and Smowton, Peter Michael eds.
Proceedings of Novel In-Plane Semiconductor Lasers IX, San Francisco, USA, 25-28 January 2010.
Proceedings of SPIE
(7616)
Bellingham, WA:
SPIE,
p. 761605.
10.1117/12.845843
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O'Driscoll, Ian, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Blood, Peter
2009.
Low-temperature nonthermal population of InAs-GaAs quantum dots.
IEEE Journal of Quantum Electronics
45
(4)
, pp. 380-387.
10.1109/JQE.2009.2013869
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