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Number of items: 8.

Yi, Xin, Jin, Xiao, Liang, Baolai L., Lewis, Harry, Tian, Qingyu, Tan, Chee Hing, Xie, Shiyu ORCID: https://orcid.org/0000-0002-1994-5878, Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704, Yan, Zhao, Buller, Gerald, David, John P. R., Digonnet, Michel J. and Jiang, Shibin 2025. Excess noise in AlxGa1-xAs0.56Sb0.44 lattice matched to InP at room temperature. Presented at: OPTO 2025, San Francisco, California, USA, 25-31 January 2025. Proceedings Optical Components and Materials XXII. , vol.13362 SPIE, 10.1117/12.3042894

Jin, Xiao, Lewis, Harry I. J., Yi, Xin, Xie, Shiyu ORCID: https://orcid.org/0000-0002-1994-5878, Liang, Baolai, Tian, Qingyu, Huffaker, Diana L., Tan, Chee Hing and David, John P. R. 2023. Very low excess noise Al0.75Ga0.25As0.56Sb0.44 avalanche photodiode. Optics Express 31 (20) , pp. 31670-33764. 10.1364/OE.500169
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Ahmed, Jamal, Xie, Shiyu ORCID: https://orcid.org/0000-0002-1994-5878, Liang, Baolai, Yi, Xin, Jin, Xiao, Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, David, John. P. R. and Huffaker, Diana L. ORCID: https://orcid.org/0000-0001-5946-4481 2021. Theoretical analysis of AlAs0.56Sb0.44 single photon avalanche diodes with high breakdown probability. IEEE Journal of Quantum Electronics 57 (2) , 4500206. 10.1109/JQE.2021.3058356
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Yi, Xin, Xie, Shiyu ORCID: https://orcid.org/0000-0002-1994-5878, Liang, Baolai L., Lim, L.W., Huffaker, Diana L. ORCID: https://orcid.org/0000-0001-5946-4481, Tan, Chee H. and David, John P. R. 2020. Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44. Presented at: SPIE Security + Defence, Virtual, UK, 21-25 Sept 2020. Proceedings Volume 11540, Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III. , vol.11540 UK: SPIE, 10.1117/12.2573766
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Xie, Shiyu ORCID: https://orcid.org/0000-0002-1994-5878, Li, Haochen, Ahmed, Jamal and Huffaker, Diana L. ORCID: https://orcid.org/0000-0001-5946-4481 2020. 3D Simple Monte Carlo statistical model for GaAs nanowire single photon avalanche diode. IEEE Photonics Journal 12 (4) , 6802008. 10.1109/JPHOT.2020.3006957
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Huang, Jianliang, Zhao, Chengcheng, Nie, Biying, Xie, Shiyu ORCID: https://orcid.org/0000-0002-1994-5878, Kwan, Dominic C. M., Meng, Xiao, Zhang, Yanhua, Huffaker, Diana L. ORCID: https://orcid.org/0000-0001-5946-4481 and Ma, Wenquan 2020. High-performance mid-wavelength InAs avalanche photodiode using AlAs013Sb087 as the multiplication layer. Photonics Research 8 (5) , pp. 755-759. 10.1364/PRJ.385177
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Yi, Xin, Xie, Shiyu ORCID: https://orcid.org/0000-0002-1994-5878, Liang, Baolai, Lim, Leh W., Cheong, Jeng S., Debnath, Mukul C., Huffaker, Diana L. ORCID: https://orcid.org/0000-0001-5946-4481, Tan, Chee H. and David, John P. R. 2019. Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes. Nature Photonics 13 , pp. 683-686. 10.1038/s41566-019-0477-4
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Yi, Xin, Xie, Shiyu ORCID: https://orcid.org/0000-0002-1994-5878, Liang, Baolai, Woon Lim, Leh, Zhou, Xinxin, Debnath, Mukul C., Huffaker, Diana ORCID: https://orcid.org/0000-0001-5946-4481, Hing Tan, Chee and David, John. P. R. 2018. Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP. Scientific Reports 8 , 9107. 10.1038/s41598-018-27507-w
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