The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects

Westwood, David I., Sobiesierski, Zbigniew and Matthai, Clarence Cherian 1999. The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects. Applied Surface Science 144-45 , pp. 484-487. 10.1016/S0169-4332(98)00845-9

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Abstract

Reflectance anisotropy spectroscopy (RAS) has been used to monitor the formation and development of InAs islands grown onto GaAs(001) substrates in real time. This is possible because the signal at a photon energy of 4.0 eV is mainly sensitive to the thickness of the continuous inter-island wetting layer in the thickness range of interest. This makes it possible, for the first time, to follow the partition of material between the wetting layer and islands. Monitoring the deposition of 2 monolayers of material at a fixed growth temperature of 475°C reveals important details of the growth process, such as the fact that the fraction of the incident flux incorporated immediately into the islands is largely insensitive to growth rate.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Lifelong Learning Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Quantum dots; Semiconductor; Reflectance anisotropy spectroscopy (RAS); Epitaxy; Islands
Publisher:	Elsevier
ISSN:	0169-4332
Last Modified:	04 Jun 2017 02:38
URI:	https://orca.cardiff.ac.uk/id/eprint/11231

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